Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

摘要

With minima in the diagonal conductance G_{xx} and in the absolute value ofthe derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h,spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAslayers with low electron mobility 2000 cm^2/Vs in spite of the fact that thespin-splitting is much smaller than the level broadening. Experimental resultscan be explained in the frame of the scaling theory of the quantum Hall effect,applied independently to each of the two spin subbands.